Performance Analysis of Various Fin Patterns of Hybrid Tunnel FET

High speed and low power dissipation devices are expected from future generation technology of Nano-electronic devices. Tunnel field effect transistor (TFET) is unique to the prominent in applications. To minimize leakage currents, tunnel switching TFETs superior conventional MOS FETs. The gate coverage area different fin shape hybrid field-effect transistors more impacted on electric characteristics drive current, current subthreshold slope. In this paper design various patterns TFET shows better performance as compared with other FET. TCAD simulation tool used determine